KMID : 1102020170470010013
|
|
Applied Microscopy 2017 Volume.47 No. 1 p.13 ~ p.18
|
|
Understanding the Growth Kinetics of Graphene on Cu and Fe2O3 Using Inductively-Coupled Plasma Chemical Vapor Deposition
|
|
Nang Lam Van
Kim Dong-Ok Trung Tran Nam Arepalli Vinaya Kumar Kim Eui-Tae
|
|
Abstract
|
|
|
High-quality graphene was synthesized on Cu foil and Fe2O3 film using CH4 gas via inductively-coupled plasma chemical vapor deposition (ICPCVD). The graphene film was formed on Fe2O3 at a temperature as low as 700¡ÆC. Few-layer graphene was formed within a few seconds and 1 min on Cu and Fe2O3, respectively. With increasing growth time and plasma power, the graphene thickness was controllably reduced and ultimately self-limited to a single layer. Moreover, the crystal quality of graphene was constantly enhanced. Understanding the ICPCVD growth kinetics that are critically affected by ICP is useful for the controllable synthesis of high-quality graphene on metals and oxides for various electronic applications.
|
|
KEYWORD
|
|
Graphene, Chemical vapor deposition, Inductively-coupled plasma
|
|
FullTexts / Linksout information
|
|
|
|
Listed journal information
|
|
|